| PART |
Description |
Maker |
| GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| KMM366S804BTL |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM366S824BT |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| WED3DG728V-D1 WED3DG728V7D1 WED3DG728V10D1 WED3DG7 |
64MB - 8Mx72 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HY57V641620ELTP-5 HY57V641620ELTP-6 HY57V641620ELT |
SDRAM - 64Mb
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位，4BanksK的刷新，3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module
32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块)
x72 SDRAM Module x72内存模块
32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块）
|
IBM Microeletronics
DB Lectro, Inc.
International Business Machines, Corp.
|
| EM482M3244VTA-5L |
64Mb SDRAM
|
ETC[ETC]
|
| MSM586SL MSM586SL-32 MSM586SL-64 |
Soldered 32MB SDRAM (64MB)
|
Advanced Digital Logic, Inc.
|
| K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4 |
64Mb H-die SDRAM Specification
|
Samsung semiconductor
Samsung Electronic
|
